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PD - 9.1404A
PRELIMINARY
l l l l l l
IRFI5210
HEXFET(R) Power MOSFET
D
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated
VDSS = -100V RDS(on) = 0.06
G
ID = -23A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
-23 -16 -140 63 0.42 20 690 -21 6.3 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
2.4 65
Units
C/W
3/16/98
IRFI5210
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. -100 --- --- -2.0 10 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- -0.11 --- --- --- --- --- --- --- --- --- --- 17 86 79 81 4.5 7.5 2700 790 450 12
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.06 VGS = 10V, ID = -12A -4.0 V VDS = VGS, ID = -250A --- S VDS = -50V, ID = -21A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 180 ID = -21A 25 nC VDS = -80V 97 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -21A ns --- RG = 2.5 --- RD = 2.4, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = -25V pF --- = 1.0MHz, See Fig. 5 --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 170 1.2 -23 A -140 -1.3 260 1.8 V ns C
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = -12A, VGS = 0V TJ = 25C, IF = -21A di/dt = -100A/s
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRF5210 data and test conditions
VDD = -25V, starting TJ = 25C, L = 3.1mH
RG = 25, IAS = -21A. (See Figure 12)
ISD -21A, di/dt -480A/s, VDD V(BR)DSS,
TJ 175C
IRFI5210
1000
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
1000
-ID , D rain-to-S ource C urrent (A )
-ID , D rain-to-S ource C urrent (A )
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
100
10
10
-4.5V 40 s P U LS E W ID TH T C = 175C
0.1 1 10
1 0.1 1
-4.5V 40 s P U LS E W ID TH T c = 25C A
10 100
1
A
100
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = -35A
-I D , D rain-to -S o urc e C urre nt (A )
2.5
100
T J = 2 5 C T J = 1 7 5 C
2.0
1.5
10
1.0
0.5
1 4 5 6 7
V D S = -5 0 V 4 0 s P U L S E W ID T H
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
VG S = -10V
100 120 140 160 180
A
-VG S , G a te -to -S o u rc e V o lta g e (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI5210
6000
5000
-V G S , G ate-to-S ource V oltage (V )
C is s
V GS C iss C rss C oss
= = = =
0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd
20
I D = -2 1A V D S = -80V V D S = -50V V D S = -20V
16
C , C apacitanc e (pF )
4000
C os s
3000
12
C rs s
2000
8
1000
4
0 1 10 100
A
0 0 40 80
FO R TE S T C IR C U IT S E E FIG U R E 1 3
120 160
A
200
-VD S , D rain-to-S ource V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-I S D , R everse D rain C urrent (A )
O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on)
-I D , D rain C urrent (A )
100
100
10 s
TJ = 175C T J = 25C
10
100 s
10
1m s
1 0.4 0.8 1.2 1.6
V G S = 0V
2.0
A
1 1
T C = 25C T J = 175C S ingle P uls e
10
10m s
A
100 1000
2.4
-VS D , S ource-to-D rain V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI5210
25
VDS VGS
RD
D.U.T.
+
-ID , Drain Current (A)
15
-10V
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
5
VGS 10%
0 25 50 75 100 125 150 175
90% VDS
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.1 1 10 100 PDM t1 t2
0.01 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
20
RG
VDD
IRFI5210
VD S
L
2000
E A S , S ingle P ulse A valanc he E nergy (m J)
RG
D .U .T
IA S
TO P
1600
VD D A
B O TTO M
ID -8.6A -15A -21A
-20 V
D R IV E R
0.01
tp
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
-10V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
D.U.T.
-
+ -
1200
800
400
0 25 50 75 100 125 150
A
175
S tarting T J , Junc tion T em perature (C )
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
50K 12V .2F .3F
VDS
IRFI5210
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS*
**
* dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
VDD
*
* Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D= P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRFI5210
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
7.10 (.280) 6.70 (.263)
16.00 (.630) 15.80 (.622)
1.15 (.045) M IN . 1 2 3
NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D
A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
E X A M P L E : T H IS IS A N IR F I8 4 0 G W ITH A S S E M B L Y LOT COD E E401
A
IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE
PART NUMBER IR F I8 4 0 G
E 40 1 92 45
D ATE CO DE (Y Y W W ) Y Y = YE A R W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98

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